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cpSiVOXcarU WRoMovnJT 1. Introduction. The incorporation of high-K
dielectrics with metal gates into a manufacturable, high volume transistor process is the result of tremendous ingenuity and effort by many scientists and engineers .We review that progress in this article, with an emphasis on the key developments in the high-K/metal gate stack process.
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Nanotechnology Businesses sorted by location. In some instances, the business has many locations - in these cases, we have included the corporate headquarters, and occasionally the R&D or fab labs.
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2003年4月号(第106巻第1013号) pp259-262)
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