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Plasma-Induced Charging Damage of Gate Oxides. Z. Wang 1, P. Tann er 2, C. Sal m 1, T. Mout haan 1, ... The impact of plasma-charging damage on ultra-thin gate oxide is discussed. The argument for ...
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The Penguin Classic Crime Omnibus Engineering By Design The Penguin Classic Crime Omnibus The Penguin Classic Crime Omnibus "Control of Plasma Damage to Gate Oxide during High Density Plasma Chemical Vapor Deposition" S. Bothra, C. Gabriel, S. Lassig and D. Pirkle, J. Electrochem. Soc. 142 L208 (1995) "Application of Plasma Charging Probe to Production HDP CVD Tool", G. Roche and J. McVittie, First International Symposium on Plasma Process-Induced Damage, May 13-14 ...
Engineering By Design The Penguin Classic Crime Omnibus Mechanism of Plasma Charging Damage III. Kin P. Cheung. Pages 169-204. PDF. Charging Damage Measurement I — Determination of Plasma’s Ability to Cause Damage. Kin P. Cheung. Pages 205-244. PDF. Charging Damage Measurement II — Direct Measurement of Damage. Kin P. Cheung. Pages 245-310. PDF. Coping with Plasma Charging Damage.
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Engineering By Design The Penguin Classic Crime Omnibus Plasma uniformity is the most important factor governing charging damage, but is not the only factor. Plasma uniformity extending beyond the edge of the wafer is important. Mere showing that the plasma is uniform across the most part of the wafer is misleading.
The Penguin Classic Crime Omnibus The Penguin Classic Crime Omnibus The Penguin Classic Crime Omnibus Engineering By Design Wafer charging damage in IC process equipment is the result of ... Product charging damage in IC processing equipment has been a recurring problem in ... observed in plasma equipment.) Charging damage in processes where the electrodes are entirely exposed, such as resist stripping (3) is typically associated with global variations ...
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